CMOS active pixel sensor star tracker with regional electronic shutter
نویسندگان
چکیده
منابع مشابه
CMOS Active Pixel Image Sensor
This paper addresses the development of a micropower 176 144 CMOS active pixel image sensor that dissipates one to two orders of magnitude less power than current state-of-the-art CMOS image sensors. The chip operates from a 1.5-V voltage source and the power consumption measured for the chip running from an internal 25.2-MHz clock yielding 30 frames per second is about 550 W. This amount enabl...
متن کاملFrame-Transfer CMOS Active Pixel Sensor with Pixel Binning
The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifier-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32 32 element prototype sensor with 24m pixel pitch was fabricated in 1.2m CMOS and demonstrated.
متن کاملProgrammable multiresolution CMOS active pixel sensor
CMOS active pixel sensors (APS) allow the flexibility of placing signal processing circuitry on the imaging focal plane. The multiresolution CMOS APS can perform block averaging on-chip to eliminate the off-chip software intensive image processing. This 128 x 128 APS array can be read out at any user-defined resolution by configuring a set of digital shift registers. The full resolution frame r...
متن کاملA 35mm 13.89 Million Pixel CMOS Active Pixel Image Sensor
This paper discusses a 13.89 million pixels CMOS image sensor for digital SLR cameras. The pitch of the 3transistor active pixel is 8 microns. The sensor has a full well charge of 117K electrons and 33 electrons temporal noise, and a dynamic range of 71 dB. The fixed pattern noise is 0.14% RMS, obtained by an on-chip correction circuit. Color filters have been optimized for best photographic pe...
متن کاملA 256 X 256 CMOS Active Pixel Image Sensor
A 256 X 256 CMOS photo-gate active pixel image sensor is presented. The image sensor uses four MOS transistors within each pixel to buffer the photo-signal, enhance sensitivity, and suppress noise. The pixel size is 20 im X 20 jm and was implemented in a standard digital 0.9 pm single-polysilicon, double-metal, n-well CMOS process; leading to 25% fill-factor. Row and column decoders and counter...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1997
ISSN: 0018-9200
DOI: 10.1109/4.551925